Infineon Technologies
FF11MR12W2M1HB70BPSA1
MOSFET Modules EasyPACK module with CoolSiC Trench MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Package
- 92 mm x 20 mm x 30 mm
- Mounting Style
- Press Fit
- Packaging
- Tray
Technical Specifications
21 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 100 A
- Rds On - Drain-Source Resistance
- 11.3 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 20 mW
- Configuration
- Dual
- Country of Origin
- AT
Show more parameters (9)
- Fall Time
- 28 ns
- If - Forward Current
- 89 A
- Rise Time
- 16.4 ns
- Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 64.3 ns
- Typical Turn-On Delay Time
- 25.1 ns
- Vf - Forward Voltage
- 1.5 V
- Vr - Reverse Voltage
- 1.2 kV
- Part # Aliases
- FF11MR12W2M1H_B70 SP005751849
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.