ROHM Semiconductor
RCD100N19TL
MOSFET 4V Drive Nch Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- RCD100N19
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 190 V
- Id - Continuous Drain Current
- 10 A
- Rds On - Drain-Source Resistance
- 130 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 500 mV
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 52 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 85 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 75 ns
- Rise Time
- 20 ns
- Typical Turn-Off Delay Time
- 140 ns
- Typical Turn-On Delay Time
- 15 ns
- Part # Aliases
- RCD100N19
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.