ROHM Semiconductor
QH8KE6TCR
MOSFETs 100V 4A, Dual Nch+Nch, TSMT8, Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- TSMT-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 4 A
- Rds On - Drain-Source Resistance
- 56 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 6.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.5 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Configuration
- Dual
- Country of Origin
- TH
- Fall Time
- 9 ns
- Forward Transconductance - Min
- 3.4 S
- Moisture Sensitive
- Yes
- Rise Time
- 8 ns
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 20 ns
- Typical Turn-On Delay Time
- 7.5 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.