Diodes Incorporated
ZXTN2010ZQTA
Bipolar Transistors - BJT Pwr Low Sat Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTN2010
- Mounting Style
- SMD/SMT
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 190 V
- Emitter- Base Voltage VEBO
- 8.1 V
- Collector-Emitter Saturation Voltage
- 230 mV
- Maximum DC Collector Current
- 20 A
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
Show more parameters (3)
- Continuous Collector Current
- 5 A
- Pd - Power Dissipation
- 1.5 W
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.