ON Semiconductor / Fairchild
FCH35N60
MOSFET 600V N-Channel SuperFET
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- MOSFET
- Series
- FCH35N60
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 35 A
- Rds On - Drain-Source Resistance
- 79 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 139 nC
- Pd - Power Dissipation
- 312.5 W
- Configuration
- Single
- Tradename
- SuperFET
Show more parameters (10)
- Height
- 20.82 mm
- Length
- 15.87 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.82 mm
- Forward Transconductance - Min
- 28.8 S
- Fall Time
- 73 ns
- Rise Time
- 120 ns
- Typical Turn-Off Delay Time
- 105 ns
- Typical Turn-On Delay Time
- 34 ns
- Unit Weight
- 0.225401 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.