Microchip Technology
APT50GH120BSC20
IGBTs IGBT FAST Fieldstop SiC Combi 1200 V 50 A TO-247
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBTs
- Package
- TO-247-3
- Mounting Style
- Through Hole
Technical Specifications
9 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 119 A
- Pd - Power Dissipation
- 492 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 100 nA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.