Infineon Technologies
GS-065-011-6-L-MR
GaN FETs LEGACY GAN SYSTEMS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- GaN FETs
- Package
- PDFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
23 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 700 V
- Id - Continuous Drain Current
- 12.2 A
- Rds On - Drain-Source Resistance
- 180 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 2.6 V
- Qg - Gate Charge
- 2.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Channel Mode
- Enhancement
- Configuration
- Single
Show more parameters (11)
- Country of Assembly
- TH
- Country of Diffusion
- TW
- Country of Origin
- TW
- Fall Time
- 9 ns
- Maximum Operating Frequency
- 1 MHz
- Minimum Operating Frequency
- 0 Hz
- Moisture Sensitive
- Yes
- Rise Time
- 4 ns
- Technology
- GaN-on-Si
- Typical Turn-Off Delay Time
- 8 ns
- Typical Turn-On Delay Time
- 5 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.