Infineon Technologies
IGB110S101XTMA1
GaN FETs MV GAN DISCRETES
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- GaN FETs
- Series
- 100V G3
- Package
- PG-VSON-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Transistor Polarity
- HEMT
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 23 A
- Vgs - Gate-Source Voltage
- - 4 V, + 5.5 V
- Vgs th - Gate-Source Threshold Voltage
- 2.9 V
- Qg - Gate Charge
- 3.4 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 15 W
- Channel Mode
- Enhancement
- Tradename
- CoolGaN
Show more parameters (9)
- Configuration
- Single
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- MY
- Product
- Transistors
- Technology
- GaN
- Transistor Type
- 1 N-Channel
- Type
- CoolGaN Transistor
- Part # Aliases
- IGB110S101 SP005751574
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.