Toshiba
TK4A60DB(STA4,Q,M)
MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK4A60DB
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 3.7 A
- Rds On - Drain-Source Resistance
- 2.2 Ohms
- Pd - Power Dissipation
- 25 W
- Configuration
- Single
- Height
- 15 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.5 mm
Show more parameters (1)
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.