ROHM Semiconductor
SCT4062KWATL
SiC MOSFETs TO263 1.2KV 24A N-CH SIC
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- SiC MOSFETs
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 24 A
- Rds On - Drain-Source Resistance
- 62 mOhms
- Vgs - Gate-Source Voltage
- - 4 V, + 21 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
- Qg - Gate Charge
- 64 nC
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 93 W
- Channel Mode
- Enhancement
- Configuration
- Single
Show more parameters (10)
- Country of Origin
- JP
- Fall Time
- 10 ns
- Forward Transconductance - Min
- 6.5 S
- Product
- SiC MOSFETS
- Rise Time
- 11 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- Power MOSFET
- Typical Turn-Off Delay Time
- 22 ns
- Typical Turn-On Delay Time
- 4.4 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.