SemiQ
GCMS010B120S1-E1
MOSFET Modules 1200V SBD Module, 9mohm COPACK, SOT-227
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Series
- GCMS
- Package
- SOT-227-4
- Mounting Style
- Screw Mount
- Packaging
- Tube
Technical Specifications
22 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 204 A
- Rds On - Drain-Source Resistance
- 14 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 652 W
- Configuration
- Single
- Country of Origin
- PH
Show more parameters (10)
- Fall Time
- 34 ns
- Height
- 12.9 mm
- Length
- 38.1 mm
- Product
- SiC MOSFET-SiC SBD Modules
- Rise Time
- 16 ns
- Type
- Silicon Carbide (SiC) COPACK Power Module
- Typical Turn-Off Delay Time
- 74 ns
- Typical Turn-On Delay Time
- 35 ns
- Vf - Forward Voltage
- 1.56 V
- Width
- 25.3 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.