Renesas Electronics
RBE111N10R1SZN2#HB0
MOSFETs Ind. MOS REXFET-1 100V 11.1mohm 3x3pkg
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFETs
- Series
- REXFET-1
- Package
- uSO8-FL
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 40 A
- Rds On - Drain-Source Resistance
- 11.1 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 28 nC
- Channel Mode
- Enhancement
- Configuration
- Hex
- Country of Origin
- JP
- Transistor Type
- 1 N-Channel
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.