Infineon Technologies
IMW65R083M1HXKSA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 24 A
- Rds On - Drain-Source Resistance
- 111 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.7 V
- Qg - Gate Charge
- 19 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 104 W
- Channel Mode
- Enhancement
Show more parameters (3)
- Country of Origin
- AT
- Technology
- SiC
- Part # Aliases
- IMW65R083M1H SP005423802
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.