Renesas Electronics
TP65H480G4JSG-TR
GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- GaN FETs
- Series
- Gen IV SuperGaN
- Package
- PQFN-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
19 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 3.6 A
- Rds On - Drain-Source Resistance
- 560 mOhms
- Vgs - Gate-Source Voltage
- - 18 V, + 18 V
- Vgs th - Gate-Source Threshold Voltage
- 2.8 V
- Qg - Gate Charge
- 9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 13.2 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Tradename
- SuperGaN
- Configuration
- Single
- Country of Origin
- PH
- Moisture Sensitive
- Yes
- Technology
- GaN
- Transistor Type
- HEMT
- Part # Aliases
- TP65H480G4JSG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.