onsemi
NXH450B100H4Q2F2PG
IGBT Modules 1000V75A FSIII IGBT MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- IGBT Modules
- Series
- NXH450B100H4Q2
- Packaging
- Tray
Technical Specifications
12 parameters- Product
- SiC IGBT Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 1 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 101 A
- Gate-Emitter Leakage Current
- 800 nA
- Pd - Power Dissipation
- 234 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- CN
- Technology
- Si
- Tradename
- EliteSiC
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.