Qorvo
TGF2018
RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- TGF
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Type
- pHEMT
- Technology
- GaAs
- Gain
- 14 dB
- Vds - Drain-Source Breakdown Voltage
- 8 V
- Vgs - Gate-Source Breakdown Voltage
- - 15 V
- Id - Continuous Drain Current
- 58 mA
- Maximum Drain Gate Voltage
- 12 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 640 mW
- Configuration
- Single
- Operating Frequency
- 20 GHz
Show more parameters (7)
- Operating Temperature Range
- - 65 C to + 150 C
- Product
- RF JFET
- Type
- GaAs pHEMT
- Forward Transconductance - Min
- 70 mS
- NF - Noise Figure
- 1 dB
- P1dB - Compression Point
- 22 dBm
- Part # Aliases
- 1098412
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.