Infineon Technologies
BSP613PH6327XTSA1
MOSFET P-Ch -60V -2.9A SOT-223-3
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- BSP613
- Package
- PG-SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 2.9 A
- Rds On - Drain-Source Resistance
- 130 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 22 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.8 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1.6 mm
- Length
- 6.5 mm
- Transistor Type
- 1 P-Channel
- Width
- 3.5 mm
- Forward Transconductance - Min
- 2.7 S
- Fall Time
- 7 ns
- Rise Time
- 9 ns
- Typical Turn-Off Delay Time
- 26 ns
- Typical Turn-On Delay Time
- 6.7 ns
- Part # Aliases
- BSP613P H6327 SP001058788
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.