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IXYS

IXTH360N055T2

MOSFET 360Amps 55V

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Series
IXTH360N055
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

7 parameters
Technology
Si
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
55 V
Id - Continuous Drain Current
360 A
Rds On - Drain-Source Resistance
2.4 mOhms
Tradename
HiPerFET
Unit Weight
0.056438 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXTH360N055T2 Specifications and Datasheet | ChipSourceHub