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ROHM Semiconductor

SH8J66TB1

MOSFET Pch+Pch -30V -9A MOSFET

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
MOSFET
Package
SOP-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

9 parameters
Technology
Si
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
9 A
Rds On - Drain-Source Resistance
19 mOhms
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2 W
Forward Transconductance - Min
11 S
Unit Weight
0.030018 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SH8J66TB1 Specifications and Datasheet | ChipSourceHub