Toshiba
TK35N65W,S1F
MOSFET MOSFET NChannel 068ohm DTMOS
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK35N65W
- Package
- TO-247-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 35 A
- Rds On - Drain-Source Resistance
- 68 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 100 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 270 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- DTMOSIV
- Height
- 20.95 mm
- Length
- 15.94 mm
- Transistor Type
- 1 N-Channel
- Width
- 5.02 mm
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.