IXYS
MDI100-12A3
IGBT Modules 100 Amps 1200V
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Series
- MDI100
- Package
- Y4-M5-7
- Mounting Style
- Chassis Mount
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Product
- IGBT Silicon Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Continuous Collector Current at 25 C
- 135 A
- Gate-Emitter Leakage Current
- 300 nA
- Pd - Power Dissipation
- 560 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Height
- 30 mm
- Length
- 94 mm
- Technology
- Si
- Width
- 34 mm
Show more parameters (2)
- Maximum Gate Emitter Voltage
- 20 V
- Unit Weight
- 6.349313 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.