SemiQ
GCMX080A120B2T1P
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Series
- GCMX
- Package
- B2
- Mounting Style
- Press Fit
- Packaging
- Tray
Technical Specifications
22 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 6 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 29 A
- Rds On - Drain-Source Resistance
- 100 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 103 W
- Configuration
- Hexa
Show more parameters (10)
- Country of Origin
- TW
- Fall Time
- 18 ns
- Height
- 12 mm
- Length
- 62.8 mm
- Product
- Modules
- Rise Time
- 4 ns
- Typical Turn-Off Delay Time
- 22 ns
- Typical Turn-On Delay Time
- 12 ns
- Vf - Forward Voltage
- 4.2 V
- Width
- 33.8 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.