Diodes Incorporated
APT13005DT-G1
Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- APT13005
- Package
- TO-220AB-3
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Maximum DC Collector Current
- 8 A
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 35 at 2 A, 5 V
- DC Collector/Base Gain hfe Min
- 8 at 2 A, 5 V
- Pd - Power Dissipation
- 75 W
Show more parameters (1)
- Unit Weight
- 0.081130 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.