Toshiba
RN1101MFV,L3F
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1101
- Package
- VESM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 30
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 10 V
- Height
- 0.5 mm
Show more parameters (6)
- Length
- 1.2 mm
- Operating Temperature Range
- - 55 C to + 150 C
- Type
- NPN Epitaxial Silicon Transistor
- Width
- 0.8 mm
- Number of Channels
- 1 Channel
- Channel Mode
- Enhancement
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.