EPC
EPC2104
GaN FETs EPC eGaN Symetrical Half Bridge,100 V, 6.8 milliohm at 5 V, BGA 6.05 x 2.3
Basic Information
View Datasheet ↗- Manufacturer
- EPC
- Product Category
- GaN FETs
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 30 A
- Rds On - Drain-Source Resistance
- 6.8 mOhms
- Vgs - Gate-Source Voltage
- 6 V, - 4 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 6.8 nC, 6.8 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Channel Mode
- Enhancement
- Tradename
- eGaN FET
- Product
- Power Transistor
Show more parameters (4)
- Technology
- GaN
- Transistor Type
- 2 N-Channel
- Type
- Half-Bridge
- Unit Weight
- 0.000811 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.