Toshiba
HN1B04FU-GR,LXHF
Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Package
- US-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V, 60 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 120 MHz, 150 MHz
- Qualification
- AEC-Q200
- Continuous Collector Current
- 150 mA
- Country of Origin
- TH
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 120 at 2 mA, 6 V
- DC Current Gain hFE Max
- 400 at 2 mA, 6 V
- Part # Aliases
- HN1B04FU-GR,LXHF(B
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.