Bourns
TISP61089ADR-S
SCRs Dual P Gate Forward Conducting
Basic Information
View Datasheet ↗- Manufacturer
- Bourns
- Product Category
- SCRs
- Series
- TISP61089
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Breakover Current IBO Max
- 11 A
- Rated Repetitive Off-State Voltage VDRM
- 120 V
- Off-State Leakage Current @ VDRM IDRM
- 5 uA
- Vf - Forward Voltage
- 3 V
- Gate Trigger Voltage - Vgt
- 2.5 V
- Gate Trigger Current - Igt
- - 5 uA
- Holding Current Ih Max
- - 150 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Breakover Voltage VBO
- - 57 V
- Current Rating
- 5 uA
- Height
- 2.2 mm
Show more parameters (6)
- Length
- 5.6 mm
- Type
- Dual Forward Conducting P-Gate Thyristors
- Width
- 5.6 mm
- Non Repetitive On-State Current
- 11 A
- Tradename
- TISP
- Unit Weight
- 0.004762 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.