ROHM Semiconductor
BSM300D12P4G101
MOSFET Modules 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET Modules
- Package
- Module
- Mounting Style
- Screw Mount
- Packaging
- Bulk
Technical Specifications
19 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 291 A
- Vgs - Gate-Source Voltage
- - 4 V, + 21 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 925 W
- Configuration
- Dual
- Country of Origin
- JP
Show more parameters (7)
- Fall Time
- 57 ns
- Length
- 152 mm
- Rise Time
- 45 ns
- Type
- SiC Power Module
- Typical Turn-Off Delay Time
- 270 ns
- Typical Turn-On Delay Time
- 63 ns
- Width
- 62 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.