Microchip / Microsemi
APT100GN120J
IGBT Modules FG, IGBT, 1200V, 100A, SOT-227
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- IGBT Modules
- Package
- SOT-227-4
- Mounting Style
- Chassis Mount
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Product
- IGBT Silicon Modules
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 153 A
- Gate-Emitter Leakage Current
- 600 nA
- Pd - Power Dissipation
- 446 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 9.6 mm
- Length
- 38.2 mm
- Operating Temperature Range
- - 55 C to + 150 C
- Technology
- Si
Show more parameters (4)
- Width
- 25.4 mm
- Maximum Gate Emitter Voltage
- 30 V
- Tradename
- ISOTOP
- Unit Weight
- 1.058219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.