onsemi
FGD5T120SH
IGBTs 1200V 5A Field Stop Trench IGBT
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- IGBTs
- Series
- FGD5T120SH
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 2.9 V
- Maximum Gate Emitter Voltage
- - 25 V, 25 V
- Continuous Collector Current at 25 C
- 10 A
- Pd - Power Dissipation
- 69 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 10 A
- Country of Assembly
- CN
- Country of Diffusion
- KR
Show more parameters (3)
- Country of Origin
- CN
- Gate-Emitter Leakage Current
- 400 nA
- Unit Weight
- 0.009184 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.