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IXYS

IXZ2210N50L2

RF MOSFET Transistors IXZ2210N50L2 10A 500V N Channel Dual ZMOS Linear MOSFET

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
RF MOSFET Transistors
Series
IXZ221
Package
SMD-8
Mounting Style
SMD/SMT
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Polarity
Dual N-Channel
Technology
Si
Id - Continuous Drain Current
10 A
Vds - Drain-Source Breakdown Voltage
500 V
Rds On - Drain-Source Resistance
1 Ohms
Output Power
270 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Operating Frequency
2 MHz to 110 MHz
Type
RF Power MOSFET
Forward Transconductance - Min
3.1 S
Number of Channels
2 Channel
Show more parameters (3)
Pd - Power Dissipation
270 W
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXZ2210N50L2 Specifications and Datasheet | ChipSourceHub