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Microchip Technology

MX2N5115UB

JFETs JFET

Basic Information

View Datasheet ↗
Manufacturer
Microchip
Brand
Microchip Technology
Product Category
JFETs
Package
UB-4
Mounting Style
SMD/SMT

Technical Specifications

11 parameters
Technology
Si
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 800 mV
Vgs - Gate-Source Breakdown Voltage
30 V
Gate-Source Cutoff Voltage
6 V
Drain-Source Current at Vgs=0
- 60 mA
Rds On - Drain-Source Resistance
100 Ohms
Pd - Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
Maximum Drain Gate Voltage
30 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MX2N5115UB Specifications and Datasheet | ChipSourceHub