Diodes Incorporated
DSS3540M-7B
Bipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DSS35
- Package
- DFN1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 40 V
- Collector- Base Voltage VCBO
- - 40 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 350 mV
- Maximum DC Collector Current
- - 1 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 500 mA
- DC Collector/Base Gain hfe Min
- 40 at - 500 mA, - 2 V
Show more parameters (1)
- Pd - Power Dissipation
- 250 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.