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ROHM Semiconductor

BCX19HZGT116

Bipolar Transistors - BJT SOT23 45V .5A NPN BJT

Basic Information

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Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
620 mV
Pd - Power Dissipation
425 mW
Gain Bandwidth Product fT
250 MHz
Maximum Operating Temperature
+ 150 C
Qualification
AEC-Q101
Continuous Collector Current
500 mA
Show more parameters (4)
Country of Origin
KR
DC Collector/Base Gain hfe Min
40 at 500 mA, 1 V
DC Current Gain hFE Max
600 at 500 mA, 1 V
Part # Aliases
BCX19HZG

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCX19HZGT116 Specifications and Datasheet | ChipSourceHub