Nexperia
MJD31CH-QJ
Bipolar Transistors - BJT SOT428 100V 3A NPN H I PWR BJT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Pd - Power Dissipation
- 1.6 W
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
Show more parameters (4)
- Continuous Collector Current
- 3 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 10 at 3 A, 4 V
- Part # Aliases
- 934662847118
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.