Infineon / IR
FF300R12KT4PHOSA1
IGBT Modules MEDIUM POWER 62MM
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon / IR
- Product Category
- IGBT Modules
- Package
- 62 mm
- Mounting Style
- Chassis Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Product
- IGBT Silicon Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.75 V
- Continuous Collector Current at 25 C
- 300 A
- Gate-Emitter Leakage Current
- 400 nA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Part # Aliases
- FF300R12KT4P SP001056206
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.