Infineon Technologies
BC848BWH6327XTSA1
Bipolar Transistors - BJT AF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC848
- Package
- SOT-323-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 90 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Continuous Collector Current
- 100 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 330 mW
- Part # Aliases
- 848BW BC BC848BWH6327XT H6327 SP000747410
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.