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ON Semiconductor

MMUN2132LT1G

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
MMUN2132L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
4.7 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
15
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
246 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
15
Show more parameters (4)
Height
0.94 mm
Length
2.9 mm
Width
1.3 mm
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMUN2132LT1G Specifications and Datasheet | ChipSourceHub