ChipSourceHub

Microchip / Microsemi

JANTXVR2N2907AUB/TR

Bipolar Transistors - BJT 60V 600mA 500mW PNP 3 Pin CER RH Small-Signal BJT TR

Basic Information

View Datasheet ↗
Manufacturer
Microchip
Brand
Microchip / Microsemi
Product Category
Bipolar Transistors - BJT
Package
TO-18-3
Mounting Style
Through Hole
RoHS
Not compliant (source record)

Technical Specifications

13 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
60 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
1.6 V
Pd - Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
600 mA
DC Collector/Base Gain hfe Min
40
Show more parameters (1)
DC Current Gain hFE Max
450

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

JANTXVR2N2907AUB/TR Specifications and Datasheet | ChipSourceHub