ROHM Semiconductor
UMT3904U3T106
Bipolar Transistors - BJT NPN, SOT-323, 40V 200mA, Switching Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 300 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
- Country of Origin
- PH
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 30 at 100 mA, 1 V
- DC Current Gain hFE Max
- 300 at 10 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.