MACOM
NPT2022
RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
16 parameters- Transistor Type
- HEMT
- Technology
- GaN Si
- Gain
- 21 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 160 V
- Vgs - Gate-Source Breakdown Voltage
- 3 V
- Id - Continuous Drain Current
- 24 mA
- Output Power
- 100 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Configuration
- Single
- Operating Frequency
- 2 GHz
Show more parameters (4)
- Operating Temperature Range
- - 40 C to + 85 C
- Moisture Sensitive
- Yes
- Rds On - Drain-Source Resistance
- 200 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 1.6 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.