Nexperia
PBSS4160DPN-QX
Bipolar Transistors - BJT PBSS4160DPN-Q/SOT457/SC-74
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- TSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 2 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 200 mV, 250 mV
- Pd - Power Dissipation
- 450 mW
- Gain Bandwidth Product fT
- 185 MHz, 220 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Continuous Collector Current
- - 900 mA, 1 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 200 at - 1 mA, - 5 V, 250 at 1 mA, 5 V
- DC Current Gain hFE Max
- 350 at -1 mA, - 5 V, 500 at 1 mA, 5 V
- Part # Aliases
- 934669957115
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.