ROHM Semiconductor
SP8M51FRATB
MOSFET Nch+Pch 100V Vds 3A 0.135Rds(on) 8.5Qg
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- SOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 3 A, 2.5 A
- Rds On - Drain-Source Resistance
- 120 mOhms, 210 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 8.5 nC, 12.5 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
- Configuration
- Dual
Show more parameters (8)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Fall Time
- 14 ns, 19 ns
- Rise Time
- 13 ns, 13 ns
- Typical Turn-Off Delay Time
- 50 ns, 75 ns
- Typical Turn-On Delay Time
- 13 ns, 15 ns
- Part # Aliases
- SP8M51FRA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.