ROHM Semiconductor
2SAR372P5T100Q
Bipolar Transistors - BJT PNP -0.7A -120V MIDDLE POWER T
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 120 V
- Collector- Base Voltage VCBO
- - 120 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 180 mV
- Maximum DC Collector Current
- - 1.4 A
- Pd - Power Dissipation
- 0.5 W
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 390
Show more parameters (3)
- Technology
- Si
- Continuous Collector Current
- - 0.7 A
- DC Collector/Base Gain hfe Min
- 120
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.