onsemi
2SC5964-TD-E
Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5964
- Package
- PCP-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 3.5 W
- Gain Bandwidth Product fT
- 380 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 3 A, 3 A
Show more parameters (3)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 200
- DC Current Gain hFE Max
- 560
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.