Infineon Technologies
IRFHM830TRPBF
MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- PQFN-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 21 A
- Rds On - Drain-Source Resistance
- 4.8 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 31 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.7 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1.05 mm
- Length
- 3.3 mm
- Transistor Type
- 1 N-Channel
- Type
- HEXFET Power MOSFET
- Width
- 3.3 mm
- Forward Transconductance - Min
- 52 S
- Fall Time
- 9.2 ns
- Rise Time
- 25 ns
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 12 ns
- Part # Aliases
- SP001566782
- Unit Weight
- 0.002328 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.