MACOM
CGHV14250F
GaN FETs GaN HEMT 1.2-1.4GHz, 250 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440162
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 18 A
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 130 C
- Configuration
- Single
- Country of Origin
- US
- Development Kit
- CGHV14250F-TB
- Gain
- 18.6 dB
- Maximum Operating Frequency
- 1.4 GHz
- Minimum Operating Frequency
- 1.2 GHz
Show more parameters (6)
- Output Power
- 330 W
- Product
- GaN HEMTs
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Unit Weight
- 0.824529 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.