ROHM Semiconductor
TT8M1TR
MOSFET 1.5V Drive Nch+Pch MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- TSST-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 2.5 A
- Rds On - Drain-Source Resistance
- 52 mOhms, 49 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 300 mV, 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 3.6 nC, 12 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.25 W
Show more parameters (8)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Fall Time
- 17 ns, 85 ns
- Rise Time
- 17 ns, 30 ns
- Typical Turn-Off Delay Time
- 28 ns, 120 ns
- Typical Turn-On Delay Time
- 9 ns, 9 ns
- Part # Aliases
- TT8M1
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.