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onsemi

NVMFS6H836NT1G

MOSFETs T8 80V SO8FL

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NVMFS6H836N
Package
SO-8FL-4
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
80 A
Rds On - Drain-Source Resistance
6.7 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
25 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
89 W
Show more parameters (12)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Assembly
MY
Country of Diffusion
JP
Country of Origin
MY
Fall Time
34 ns
Forward Transconductance - Min
97 S
Rise Time
45 ns
Typical Turn-Off Delay Time
41 ns
Typical Turn-On Delay Time
16 ns
Unit Weight
0.006173 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVMFS6H836NT1G Specifications and Datasheet | ChipSourceHub