ON Semiconductor
2SC5245A-4-TL-E
Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5245A
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 10 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 1.5 V
- Maximum DC Collector Current
- 30 mA
- Gain Bandwidth Product fT
- 8 GHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 270
- DC Collector/Base Gain hfe Min
- 60
- Pd - Power Dissipation
- 150 mW
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.